WebHigh Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero, TSHG8400 datasheet, TSHG8400 circuit, TSHG8400 data sheet : VISHAY, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. WebNew Vishay TSHG5410 - IR LED 850 nm 5 mm. High speed power 5 mm GaAlAs infrared LED, peak wavelength 850 nm, viewing angle 36 degrees (±18°), radiant intensity 90 mW/sr, total radiant flux 55 mW, forward current 100 mA, surge current 1 A, forward voltage 1.5 V / 2.3 V, rise / fall time 30 ns / 13 ns (cut-off frequency 18 MHz), ROHS.
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WebTSHG5410 Vishay Semiconductors Infrared Emitters - High Power 850nm,T-1.75 90mW/sr,+/-18deg. datasheet, inventory & pricing. WebCatalog Datasheet MFG & Type PDF Document Tags; 2008 - TSHG5410. Abstract: No abstract text available Text: TSHG5410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm , DESCRIPTION TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high , TSHG5410 Note Test … cyber solutions it help desk
TSHG5410 High Speed Infrared Emitting Diode, 850 nm, GaAlAs …
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