Rbn40h65t1fpq-a0#cb0

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Rbn40h65t1fpq-a0#cb0

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Rbn40h65t1fpq-a0#cb0

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WebRBN75H65T1FPQ-A0 R07DS1383EJ0120 Rev.1.20 Page 2 of 11 Aug.03.2024 Absolute Maximum Ratings (Tc = 25°C) Item Symbol Ratings Unit Collector to emitter voltage VCES 650 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 °C IC 150 A Tc = 100 °C IC 75 A Collector peak current IC(peak) Notes1 300 A Diode forward current Tc = 25 °C IF … WebOrder today, ships today. RBN40H65T1FPQ-A0#CB0 – IGBT Trench 650 V 80 A 185 W Through Hole TO-247A from Renesas Electronics America Inc. Pricing and Availability on …

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